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User Info

Profile Name
Dr. S. P. Khanna
Current Designation
Principal Scientist
Residential Address

CSIR-National Physical Laboratory Dr. K. S. Krishnan Marg, New Delhi 110012

Telephone 1
+91-11-4560 9441
Brief Biodata
  • Summary:
  • A semiconductor professional with more than 7 years of experience in developing semiconductor materials and devices for electronic, optoelectronic and spintronic applications.

    Currently working on GaN/AlN/InGaN growth using N rf-plasma MBE.

  • Achievements:
  • Invented the first electrically tunable THz QCL (a type of Laser Diode)

    Developed QCLs for THz applications

    Developed (III, Mn)V dilute magnetic semiconductors for spintronic applications (specifically – Magnetic Diodes)

    Awarded a Her Majesty’s Government Communications Centre (HMGCC UK), Ph.D. scholarship award worth £23,000 p.a. for three years

    Published Articles: 51
    Sum of Times Cited without self-citations: 418
    h-index: 11
    Proceedings Papers: 41

  • Specialties:
  • MBE growth of Si & Be doped GaAs/AlGaAs based MQW devices
    MOCVD growth of InMnAs and InMnSb magnetic films
    Microfabrication of GaAs/AlGaAs, InMnAs and InMnSb devices
    X-ray characterization of (III, Mn)V grown by MOCVD
    SEM and TEM analysis of (III, Mn)V grown by MOCVD

  • Educational Qualifications:
  • Degree Subject University/Institute Year


    THz QCLs

    University of Leeds

    2004 - 2008


    Nanoscale Science and Technology

    University of Leeds

    2003 - 2004

  • Academics/Research Experience:
  • Year Duration Research field Institute ( in India/Abroad) Fellowship

    Jan 2011 - Jan 2012

    1 years

    MOCVD growth of magnetic bipolar heterojunction devices based on (III, Mn)V materials

    Northwestern University

    MOCVD growth of magnetic bipolar heterojunction devices based on (III, Mn)V materials, study of the Landé g-factor, magnetic and electrical properties (using SQUID and magnetoresistance measurement), and structural analysis (using XRD and electron microscopes)

    Feb 2008-Jan 2011

    3 years

    Epitaxial growth of III-V semiconductors, design, fabrication and characterisation of quantum cascade lasers.
    Invented the first, “Electrically tunable terahertz quantum-cascade laser based on a heterogeneous active region”, lasing from 3.07–3.40 THz.

    University of Leeds

    Worked with a number of collaborators (including Harvard University, University of Texas Austin, Oxford University, Universite Paris-Sud, Johann Wolfgang Goethe-Universitaet Frankfurt) on the MBE growth,
    fabrication and measurement of terahertz QCLs.

  • Selected publications:
  • Nature Communications 3, 952; (17 July 2012)
    Efficient power extraction in surface-emitting semiconductor lasers using graded photonic heterostructures

    Nature Photonics 5, 306-313; (24 April 2011)
    Coherent sampling of active mode-locked terahertz quantum cascade lasers and frequency synthesis

    Nature Materials 9, 730-735; (8 August 2010)
    Designer spoof surface plasmon structures collimate terahertz laser beams

    Nature Photonics 3, 715-719; (22 November 2009)
    Terahertz amplifier based on gain switching in a quantum cascade laser

    Nature 457, 174-178; (8 January 2009)
    Electrically pumped photonic-crystal terahertz lasers controlled by boundary conditions

Profile Department
Physics of Energy Harvesting


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